Dynamics of carrier capture in an InGaAs/GaAs quantum well trap

Abstract

We report on a time-resolved luminescence study of the dynamics of carrier capture in a strained quantum well of InGaAs embedded in GaAs confining layers. Efficient carrier capture takes place at low temperature (T<70 K) and low excitation density (∼250 nJ/cm2 per pulse), while at room temperature and higher excitation density the rate of carrier collection decreases as the carriers fill all the available states in the quantum well allowed by the Fermi–Dirac statistics.