Carrier trapping in single quantum wells with different confinement structures
- 27 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (4), 226-228
- https://doi.org/10.1063/1.98456
Abstract
The trapping efficiency and trapping dynamics of photoexcited carriers in GaAs/AlGaAs single quantum wells with different confinement structures are examined at low temperature by means of picosecond luminescence as well as photoluminescence excitation spectroscopy. The trapping efficiency is 100% only in graded-index separate confinement heterostructures with a linear band-gap profile. The lower trapping efficiency of other confinement structures is due to radiative and nonradiative recombination in the confinement layers.Keywords
This publication has 15 references indexed in Scilit:
- Threshold current of single quantum well lasers: The role of the confining layersApplied Physics Letters, 1986
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986
- Summary Abstract: Influence of growth temperature on GaAs/AlGaAs single quantum well structure grown by MBEJournal of Vacuum Science & Technology B, 1985
- Abrupt OMVPE grown GaAs/GaAlAs heterojunctionsJournal of Crystal Growth, 1984
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPEElectronics Letters, 1982
- Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPEElectronics Letters, 1982
- A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beamApplied Physics Letters, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980