Mechanical stress influence on effective masses in Si inversion layers

Publisher Website

1 August 1976

journal article
Published by Elsevier in Surface Science

Vol. 58 (1), 169-177
https://doi.org/10.1016/0039-6028(76)90130-8

Abstract

No abstract available

This publication has 7 references indexed in Scilit:

Surface quantum oscillations in (100) inversion layers under uniaxial stress
Solid State Communications, 1976
Density-functional calculation of subband structure on semiconductor surfaces
Surface Science, 1976
Many-body effects in the first excited subband of the n-inversion layer of Si
Surface Science, 1976
Surface quantum oscillations in (110) and (111) n-type silicon inversion layers
Solid State Communications, 1975
Piezoresistance in n-type silicon inversion layers at low temperatures
Physica Status Solidi (a), 1973
Electron-Electron Interactions Continuously Variable in the Range $2.1 > r_{s}>0.9$
Physical Review Letters, 1972
Piezoresistance Effect in Germanium and Silicon
Physical Review B, 1954

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