Many-body effects in the first excited subband of the n-inversion layer of Si
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1), 141-145
- https://doi.org/10.1016/0039-6028(76)90124-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Spectroscopy of surface charge layers on p-type SiSurface Science, 1976
- A novel voltage tuneable infrared spectrometer-detectorIEEE Transactions on Electron Devices, 1975
- Correlation Energy and Effective Mass of Electrons in an Inversion LayerPhysical Review Letters, 1975
- Effect of the Electron-Electron Interaction on the Excitation Energies of an-Inversion Layer on SiPhysical Review Letters, 1975
- Resonance Spectroscopy of Electronic Levels in a Surface Accumulation LayerPhysical Review Letters, 1974
- Mott-Anderson Localization in the Two-Dimensional Band Tail of Si Inversion LayersPhysical Review Letters, 1974
- Electron Exchange Energy in Si Inversion LayersPhysical Review Letters, 1973
- Electron-Electron Interactions Continuously Variable in the RangePhysical Review Letters, 1972
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968