Hydrogenation and annealing kinetics of group-III acceptors in oxidized silicon
- 15 June 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12), 5148-5161
- https://doi.org/10.1063/1.335249
Abstract
Acceptor (B, Al, Ga, and In) density versus time curves during avalanche electron injection (AEI) and constant-temperature thermal annealing experiments obtained from metal-oxide-silicon capacitors (MOSCs) show two distinguishable phases. The time dependence of the acceptor density during AEI shows an initial delay due to electron-impact release of hydrogen trapped in the gate conductor and oxide layers and a long-time decay due to the thermal capture and electron-impact emission of the atomic hydrogen at the group-III acceptor centers in the silicon surface layer. Thermal anneal of hydrogenated acceptor begins at 50 °C for boron and 100 °C for Al, Ga, and In. The initial phase during thermal annealing of AEIed MOSCs follows a first order kinetics at higher annealing temperatures, reaching a steady-state acceptor density before the second phase begins. The long-time anneal follows strictly a second-order kinetics which is rate limited by the recombination of two hydrogen atoms to form a molecule. Incomplete anneal is observed at higher temperatures when the dissociation rate of the hydrogen molecule becomes comparable with the recombination rate of two hydrogen atoms. Analytical solutions are obtained which account for all the details of the observed hydrogenation and annealing curves. These solutions are used to evaluate the thermal capture and emission rates and electron-impact emission rates of hydrogen or proton at the group-III impurity centers and the bimolecular generation and recombination rates of hydrogen. A new concept of hydrogen or proton traps in analogy to the electronic hole or electron traps is introduced to analyze the kinetics and account for the observed chemical trends between thermal capture and emission rates, thermal activation energy and bond strength. Chemical trends are noted which are consistent with the trapped proton activation energy and hydrogen bond strength trend, B<Al<Ga<In.Keywords
This publication has 14 references indexed in Scilit:
- Neutralization of acceptors in silicon by atomic hydrogenApplied Physics Letters, 1984
- Study of the atomic models of three donorlike defects in silicon metal-oxide-semiconductor structures from their gate material and process dependenciesJournal of Applied Physics, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Deactivation of group III acceptors in silicon during keV electron irradiationApplied Physics Letters, 1983
- Study of the atomic models of three donor-like traps on oxidized silicon with aluminum gate from their processing dependencesJournal of Applied Physics, 1983
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983
- Generation-annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn-around phenomena on oxidized silicon during avalanche electron injectionJournal of Applied Physics, 1983
- Generation-annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized siliconJournal of Applied Physics, 1983
- Generation annealing kinetics of interface states on oxidized silicon activated by 10.2-eV photohole injectionJournal of Applied Physics, 1982
- Hot-electron emission in N-channel IGFET'sIEEE Transactions on Electron Devices, 1979