Amorphous-silicon/silicon-oxynitride field-effect transistors

Abstract

The high performance amorphous-silicon field-effect transistors were fabricated by applying silicon oxynitride as the gate insulator and high quality amorphous-silicon film as the active layer. The on-off current ratio was about 107, and the drain current varied by six orders in magnitude while the gate voltage varied by only 3 V. The field-effect mobility was as high as 1.9 cm2/V s, which is several times higher than the one reported to date.