Backscattering study on lateral spread of implanted ions
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (3), 97-98
- https://doi.org/10.1063/1.1654577
Abstract
Without ambiguities due to the cutting angle of a mask edge and the annealing process, the lateral spread of implanted Kr ions into Si substrates has been directly measured by the He+ backscattering technique. The experimental results show good agreement with theoretical predictions.Keywords
This publication has 4 references indexed in Scilit:
- Lateral spread of boron ions implanted in siliconApplied Physics Letters, 1972
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972
- Stopping Cross Sections for 0.3- to 1.7-MeV Helium Ions in Silicon and Silicon DioxideJournal of Applied Physics, 1971