Scanning-electron-beam annealing of arsenic-implanted silicon
- 15 March 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (6), 410-412
- https://doi.org/10.1063/1.90816
Abstract
〈100〉 Si implanted with As (100 keV, 1015/cm2) was annealed with a scanning electron beam. The principal results obtained were (1) the electrical activity of the e‐beam‐annealed samples is the same as for control samples subjected to either cw laser annealing or thermal annealing at 575 and 1000 °C, respectively, for 30 min each; (2) recrystallization of the implanted layer as determined by MeV ion channeling and TEM measurements is complete; (3) the electron distribution obtained by stripping and van der Pauw measurements indicates that no diffusion of the implanted atoms has occurred. The annealing is therefore essentially identical to that obtained with a scanning cw laser.Keywords
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