Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon
- 1 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (5), 389-391
- https://doi.org/10.1063/1.90386
Abstract
The use of a continuous scanned Kr ion laser as a tool for annealing of boron‐implanted silicon is described. Conditions were found that produce high electrical activity and crystallinity of the implanted layer without redistribution of the boron from the as‐implanted profile.Keywords
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