GaAs power MESFET with 41-percent power-added efficiency at 35 GHz
- 1 February 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (2), 57-58
- https://doi.org/10.1109/55.2039
Abstract
A GaAs power MESFET has been optimized for Ka-Band operation. The device has an n/sup +/ ledge channel structure with a 0.25- mu m gate on MBE-grown material. An output power density of 0.71 W/mm was achieved with 5.2-dB gain and 34% power-added efficiency. When tuned for maximum efficiency, a power-added efficiency of 41% was obtained with a power density of 0.61 W/mm and a gain of 5.6 dB.Keywords
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