Advances in HEMT Technology and Applications
- 1 January 1987
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 33 (0149645X), 749-752
- https://doi.org/10.1109/mwsym.1987.1132521
Abstract
High electron mobility transistors (HEMTs) have demonstrated unsurpassed transistor performance in the millimeter-wave range--at 60 GHz, results include a minimum noise figure of 2.3 dB with 4.0 dB associated gain, maximum small-signal gain of 11.7 dB, output power of 50 mW, power density of 0.43 W/mm and maximum power-added efficiency of 28%. The principles of HEMT operation and design are described, followed by a summary of the current state-of-the-art in noise and power performance, and discussion of several applications.Keywords
This publication has 13 references indexed in Scilit:
- Power Saturation Characteristics of GaAs/AlGaAs High Electron Mobility TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Low Noise Amplifiers Using Two Dimensional Electron Gas FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Millimeter Wave Monolithic GaAs Power FET AmplifiersProceedings of SPIE, 1988
- 35-GHz performance of single and quadruple power heterojunction HEMT'sIEEE Transactions on Electron Devices, 1986
- High-efficiency millimeter-wave GaAs/GaAlAs power HEMT'sIEEE Electron Device Letters, 1986
- GaAs power FET's having the gate recess narrower than the gateIEEE Electron Device Letters, 1986
- Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 KIEEE Transactions on Electron Devices, 1986
- 94 GHz transistor amplification using an HEMTElectronics Letters, 1986
- A microwave power double-heterojunction high electron mobility transistorIEEE Electron Device Letters, 1985
- HEMT 60 GHz amplifierElectronics Letters, 1985