Depth distribution of knock-on nitrogen in Si by phosphorus implantation through Si3N4 films

Abstract

The concentration profiles of phosphorus and knock‐on nitrogen in silicon after phosphorous implantations into Si₃N₄‐Si systems have been investigated by using secondary ion mass spectrometry (SIMS). The tails were found on the phosphorus distribution in silicon after the implantation through Si₃N₄ films. The concentration profiles of knock‐on nitrogen in silicon have been determined by measuring both the in‐depth profiles of knock‐on nitrogen and those of nitrogen after additional nitrogen implantation into a bare silicon embedded with knock‐on nitrogen. The concentration profiles of knock‐on nitrogen show a very high concentration near the surface and extending tails. It was found that the tails were observed at the deeper portion in silicon as energy increased, for a given Si₃N₄ layer.