MOS measurement of oxygen recoils from As implantation into silicon dioxide
- 15 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (4), 259-261
- https://doi.org/10.1063/1.89037
Abstract
The depth distribution of oxygen recoils from As implantation was studied by employing MOS surface state techniques. Arsenic was implanted into an SiO2 film on Si such that the recoil oxygen reached the silicon interface. By varying oxide thickness, the depth distribution could be determined. The distribution at greater depth is exponential with a characteristic length of 220 Å for an As implant at 100 keV.Keywords
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