Piezobirefringence analysis in an opaque region
- 15 February 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 21 (4), 1701-1705
- https://doi.org/10.1103/physrevb.21.1701
Abstract
We report a new method to analyze the piezobirefringence coefficient in an opaque region in which the stress-induced changes in both the real () and imaginary part () of the dielectric constant are properly taken into account. New coefficients, which determine the fractional contributions of and to the piezobirefringence coefficient, have been derived from an analytical point of view. The experimental data on Si and ZnSe reported recently have been analyzed by using the present result. Good agreement between the experiment and calculation has been found. The present method provides a guiding principle for analyzing the piezobirefringence coefficient in an opaque region.
Keywords
This publication has 17 references indexed in Scilit:
- Resonant Brillouin scattering as a form of modulation spectroscopyJournal of Physics C: Solid State Physics, 1979
- Resonant Brillouin scattering in ZnSePhysical Review B, 1979
- Resonance Raman scattering in semiconductors under uniaxial stress:gapsPhysical Review B, 1978
- Piezobirefringence above the fundamental edge in SiPhysical Review B, 1978
- A new method to measure stress-induced birefringence in an opaque material: Stress-induced Raman scatteringJournal of the Optical Society of America, 1978
- Resonant Raman scattering in InPPhysica Status Solidi (b), 1978
- Resonant Raman scattering in GaAsPhysical Review B, 1978
- Brillouin Scattering in Cubic CrystalsPhysical Review B, 1966
- Band-Structure Analysis from Electro-Reflectance StudiesPhysical Review B, 1966
- Theory of the first-order Raman effect in crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1963