Lattice scattering mobility of a two-dimensional electron gas in GaAs

Abstract

Theory of electron mobility is presented for a two-dimensional electron gas in a polar material. Calculated values of mobility are given for gallium arsenide for temperatures of 77-300 K and surface electron concentrations of (0.5-1.2) × ${10}^{16}$ ${\mathrm{m}}^{-2\mathrm{}}$. The mobility values are much lower than the bulk values and are also strongly dependent on electron concentration.