Molecular beam epitaxial growth and characterization of InSb on Si

Abstract

Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room‐temperature electron mobilities are 48 000 and 39 000 cm²/V s for 3.2 μm‐thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10¹⁶ and 2.7×10¹⁶ cm⁻³. A sample with an InSb thickness of 8 μm exhibited room‐temperature mobilities as high as 55 000 cm²/V s with carrier concentrations of about 2.0×10¹⁶ cm⁻³. A sharp band‐edge transmission spectrum is observed at room temperature for the 8 μm layer.