Radiation defects in electron-irradiated InP crystals
- 16 June 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 71 (2), 563-568
- https://doi.org/10.1002/pssa.2210710232
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Temperature dependence of the charge-carrier mobility in GaAs containing defect clustersPhysica Status Solidi (a), 1980
- On the nature of the “Limiting” Position of the fermi level in irradiated siliconPhysica Status Solidi (a), 1979
- Proton bombardment in InPSolid-State Electronics, 1977
- Electrical and optical properties of inas and inp compounds irradiated with 50 mev electronsRadiation Effects, 1977
- Recovery of low temperature electron irradiation-induced damage inn-type gaasRadiation Effects, 1970