Electrical and optical properties of inas and inp compounds irradiated with 50 mev electrons
- 1 January 1977
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 32 (1-2), 113-119
- https://doi.org/10.1080/00337577708237465
Abstract
The electrical and optical properties of semiconductive compounds of InAs and InP were studied in wide concentration (2 × 1016−2 × 1018) cm−3 and temperature (4.2–300) K ranges prior to and after electron irradiation with 50 MeV energy. The performed analysis enables us to conclude that the electrical properties of the irradiated InAs crystals are mainly determined by point type defects and those of InP by disordered regions. Optical absorption near the threshold is well explained on the basis of the concept of “radiation tails” of the density of states. Irradiation with a maximum dose up to 6 × 1017e/cm2 does not cause any appreciable change in the dynamics of lattice vibrations.Keywords
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