GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
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- 31 January 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (6), 063501
- https://doi.org/10.1063/1.1861122
Abstract
We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic-layer-deposited (ALD) as the gate dielectric. Compared to a conventional GaN high-electron-mobility-transistor (HEMT) of similar design, the MOS-HEMT exhibits several orders of magnitude lower gate leakage and several times higher breakdown voltage and channel current. This implies that the ALD ∕AlGaN interface is of high quality and the ALD ∕AlGaN∕GaN MOS-HEMT is of high potential for high-power rf applications. In addition, the high-quality ALD gate dielectric allows the effective two-dimensional (2D) electron mobility at the AlGaN∕GaN heterojunction to be measured under a high transverse field. The resulting effective 2D electron mobility is much higher than that typical of Si, GaAs or InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs).
Keywords
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