Preparation of La-modified PbTiO3 thin films on the oxide buffer layers with NaCl-type structure
- 12 September 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (11), 1463-1465
- https://doi.org/10.1063/1.112016
Abstract
La‐modified PbTiO3(PLT: Pb0.9La0.1Ti0.975O3) thin films by rf magnetron sputtering were prepared on the preferred (100)‐oriented oxide buffer layers with NaCl‐type structure, which were prepared by plasma‐enhanced metalorganic chemical vapor deposition. Fused silica, (111)Si, soda‐lime glass, and stainless steel were used as the substrates to prepare the oxide buffer layers. The c‐axis and a‐axis preferred oriented PLT thin films were obtained on the buffer layer, independent of the kind of substrate. Further, highly c‐axis oriented PLT thin films were obtained when the substrate had a large thermal expansion coefficient. Significant pyroelectric currents were detected without a poling treatment. The NiCr/PLT/(100)Pt/(100)MgO/stainless steel structure had a dielectric constant of 250, a dielectric loss factor tan δ of 0.8%, and a pyroelectric coefficient of 3.8×10−4 C/m2 K.Keywords
This publication has 8 references indexed in Scilit:
- NaCl-Type Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Ferroelectric MemoriesScience, 1989
- Preparation of epitaxial Pb(ZrxTi1−x)O3 thin films and their crystallographic, pyroelectric, and ferroelectric propertiesJournal of Applied Physics, 1989
- Pyroelectric linear array infrared sensors made of c-axis-oriented La-modified PbTiO3 thin filmsJournal of Applied Physics, 1988
- Epitaxial growth and the crystallographic, dielectric, and pyroelectric properties of lanthanum-modified lead titanate thin filmsJournal of Applied Physics, 1986
- Preparation of c-axis oriented PbTiO3 thin films and their crystallographic, dielectric, and pyroelectric propertiesJournal of Applied Physics, 1986
- PbTiO3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si WaferJapanese Journal of Applied Physics, 1984
- Integrated Pyroelectric Infrared Sensor Using PbTiO3 Thin FilmJapanese Journal of Applied Physics, 1983