d-function approach to the electromagnetic response of semiconductor heterostructures

Abstract

We develop a theory for the electromagnetic response of semiconductor heterostructures based on Feibelman’s d-function approach. This approach has been employed successfully in the quantitative analysis of the reflectivity, transmittivity, photoemission, etc., spectra of metal surfaces. As a test of this theory we examine the response of a GaAs-${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As semiconductor heterojunction and compare our results with relevant experimental data.