Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC
- 28 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (17), 2280-2281
- https://doi.org/10.1063/1.119262
Abstract
A method to form metal–oxide–semiconductor structures by oxidation of a thin polycrystalline silicon (polysilicon) layer deposited on SiC is demonstrated. The oxidation time used is sufficient to oxidize all the polysilicon while short enough at 1050 °C to insure insignificant oxidation of the underlying SiC. Since the oxidation of SiC is highly anisotropic, this method allows uniform oxide formation on a nonplanar SiC surface. The interface quality is comparable to that obtained with thermal oxidation.
Keywords
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