Nitrogen-implanted SiC diodes using high-temperature implantation
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (12), 639-641
- https://doi.org/10.1109/55.192870
Abstract
6H-SiC diodes fabricated using high-temperature nitrogen implantation up to 1000 degrees C are reported. Diodes were formed by RIE etching a 0.8- mu m-deep mesa across the N/sup +//P junction using NF/sub 3//O/sub 2/ with an aluminum transfer mask. The junction was passivated with a deposited SiO/sub 2/ layer 0.6 mu m thick. Contacts were made to N/sup +/ and P regions with thin nickel and aluminum layers, respectively, followed by a short anneal between 900 and 1000 degrees C. These diodes have reverse-bias leakage at 25 degrees C as low as 5*10/sup -11/ A/cm/sup 2/ at 10 V.Keywords
This publication has 11 references indexed in Scilit:
- Silicon carbide UV photodiodesIEEE Transactions on Electron Devices, 1993
- Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbideProceedings of the IEEE, 1991
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989
- Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue LEDsSpringer Proceedings in Physics, 1989
- Microwave and millimeter-wave power generation in silicon carbide avalanche devicesJournal of Applied Physics, 1988
- SiC-UV-PhotodetectorsPublished by SPIE-Intl Soc Optical Eng ,1988
- Recrystallization of ion-implanted α-SiCJournal of Materials Research, 1987
- Silicon carbide blue light emitting diodes with improved external quantum efficiencyJournal of Applied Physics, 1982
- Silicon carbide bipolar transistorSolid-State Electronics, 1978
- ion-implanted junctions and conducting layers in SiCRadiation Effects, 1970