Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8), 747-750
- https://doi.org/10.1063/1.93214
Abstract
Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN-αSi-Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S-I-S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface.Keywords
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