Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFET
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1), 238-245
- https://doi.org/10.1016/0039-6028(76)90144-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Transport properties of conduction electrons in n-type inversion layers in (100) surfaces of siliconJournal of Physics and Chemistry of Solids, 1974
- Transverse Magneto-Conductivity of a Two-Dimensional Electron GasJournal of the Physics Society Japan, 1972
- An introduction to percolation theoryAdvances in Physics, 1971
- On the Interaction of Electrons in MetalsPhysical Review B, 1934