Evidence for a mobility edge in inversion layers
- 15 March 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 9 (6), 2762-2765
- https://doi.org/10.1103/physrevb.9.2762
Abstract
The published transport properties of carriers in silicon inversion layers suggest the existence of a mobility edge separating conducting from localized states at low temperature. Further experimental tests of the mobility-edge model are proposed.Keywords
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