Effect of Heat Treatment upon the Electrical Properties of Silicon Crystals

Abstract

Studies have been made of the process in which donors are introduced into silicon by heating in the temperature range 300°–500°C and are caused to disappear on heating at higher temperature. This phenomena is shown to depend on the conditions of growth and the heat‐treatment history of the crystal. Evidence is summarized which shows that oxygen is the impurity from which the donors are formed. The characteristics of the processes involved are described and possible mechanisms are discussed.