High-quality silicon/insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and Si
- 1 January 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 196 (1), 88-96
- https://doi.org/10.1016/s0022-0248(98)00725-8
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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