A 230-Watt S-band SiGe heterojunction bipolar transistor
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 44 (12), 2392-2397
- https://doi.org/10.1109/22.554567
Abstract
No abstract availableKeywords
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