Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths
- 1 March 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (3A), L185
- https://doi.org/10.1143/jjap.25.l185
Abstract
The resonant tunneling current is studied in AlAs/GaAs/AlAs double barrier heterostructures in which the barrier widths L B are precisely controlled to be exactly 5, 8 and 11 atomic monolayers. It is demonstrated for the first time that the density of resonant current in these diodes can be controlled from 5×102 Acm-2 to 1.2×104 Acm-2 by the choice of L B, in accordance with the theoretical calculations. Furthermore, I–V characteristics of these devices are shown to be excellent with peak-to-valley ratios of 2.3 at room temperature and 10 at 80 K, the highest values ever reported.Keywords
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