Silicon implanted super low-noise GaAs MESFET
- 1 January 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (1), 21-23
- https://doi.org/10.1049/el:19820016
Abstract
Super low-nose GaAs MESFETs have been fabricated using direct ion implantation into undoped LEC substrates. Microwave results at 12 GHz include a noise figure of 1.3 dB, with an associated gain of 10.3 dB and a maximum available gain of 14.9 dB.Keywords
This publication has 2 references indexed in Scilit:
- Super Low Noise Packaged GaAs FETS for Ku BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Sub-Half-Micron GaAs FETS for Applications Through K BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005