Analysis of the donor-acceptor recombination band in the photoluminescence spectra of CuInSe2
- 30 November 1996
- journal article
- Published by Elsevier in Materials Letters
- Vol. 29 (1-3), 87-90
- https://doi.org/10.1016/s0167-577x(96)00133-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Concerning lattice defects and defect levels in CuInSe2 and the I-III-VI2 compoundsJournal of Applied Physics, 1990
- Defect level identification in copper indium selenide (CuInSe2) from photoluminescence studiesChemistry of Materials, 1990
- Annealing temperature effects on CuInSe2/CdS solar cellsSolar Cells, 1986
- Photoluminescence and photoconductivity ofPhysical Review B, 1985
- Shallow centers in some photovoltaic Cu-III-VI2 compoundsJournal of Physics and Chemistry of Solids, 1984
- Luminescence and impurity states in CuInSe2Journal of Applied Physics, 1983
- Photoluminescence study of acceptors in AlxGa1−xAsJournal of Applied Physics, 1982
- Evidence for a donor-acceptor pair band in CuInSe2Solid State Communications, 1976
- Analysis of the electrical and luminescent properties of CuInSe2Journal of Applied Physics, 1975
- Exciton-Donor Complexes in SemiconductorsPhysical Review B, 1967