Design of InGaAs-InAlAs multiple-quantum-well (MQW) optical modulators
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 28 (1), 224-230
- https://doi.org/10.1109/3.119517
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Chirping characteristic and frequency response of MQW optical intensity modulatorJournal of Lightwave Technology, 1992
- New travelling-wave electrode Mach-Zehnder optical modulator with 20 GHz bandwidth and 4.7 V driving voltage at 1.52 μm wavelengthElectronics Letters, 1989
- Low-voltage, 50 Ω, GaAs/AlGaAs travelling-wave modulator with bandwidth exceeding 25 GHzElectronics Letters, 1989
- Electrical and optical interactions between integrated InGaAsP/InP DFB lasers and electroabsorption modulatorsJournal of Lightwave Technology, 1988
- High speed III-V electrooptic waveguide modulators at lambda -1.3 mu mJournal of Lightwave Technology, 1988
- Evaluation of 4-Gbit/s optical fiber transmission distance with direct and external modulationJournal of Lightwave Technology, 1988
- Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulatorApplied Physics Letters, 1987
- Optical waveguides using GaAs-AlxGa1−xAs multiple quantum wellOptics Communications, 1985
- 4-Gb/s transmission experiment over 117 km of optical fiber using a Ti:LiNbO3external modulatorJournal of Lightwave Technology, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985