Fabrication of 80 nm-Wide Lines in FPM Resist by H+ Beam Exposure
- 1 December 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (12), L881
- https://doi.org/10.1143/jjap.20.l881
Abstract
80 nm-wide lines in FPM resist have been fabricated by ion beam exposure through a Au mask with a very low dose of 3×10-7 C/cm2. The Au mask-pattern was fabricated by means of an oblique evaporation technique on FPM resist for irradiation by a 50 keV H+ beam. It was confirmed that the substrate did not affect the dissolution characteristics of the FPM after the ion beam exposure. These features lead to the possibility of applying various resists other than PMMA to nanometer-lithography, making good use of their high sensitivity and/or high resistance to dry etching.Keywords
This publication has 5 references indexed in Scilit:
- Sub-20-nm-wide metal lines by electron-beam exposure of thin poly(methyl methacrylate) films and liftoffApplied Physics Letters, 1981
- Replication of 175-Å lines and spaces in polymethylmethacrylate using x-ray lithographyApplied Physics Letters, 1980
- Ion-beam lithography for IC fabrication with submicrometer featuresJournal of Vacuum Science and Technology, 1979
- 400-Å high aspect-ratio lines produced in poylmethyl methacrylate (PMMA) by ion-beam exposureApplied Physics Letters, 1979
- A high-intensity scanning ion probe with submicrometer spot sizeApplied Physics Letters, 1979