Capless anneal of ion-implanted GaAs in controlled arsenic vapor

Abstract

GaAs wafers were implanted with sulfur or silicon ions and annealed at temperatures from 800 to 950 °C under arsenic partial pressure controlled by arsine (AsH₃) flow. Electrical characteristics obtained in this method were nearly identical or superior to those obtained with dielectric films. No sign of surface deterioration was observed even after annealing at 950 °C. The implantation into a Cr‐doped epitaxial layer resulted in better characteristics than into semi‐insulating substrates from a vender. The best doping efficiency of 89% was obtained with a dose of 1×10¹³ Si⁺/cm². The method is simple and reproducible, and suitable for the annealing process in production.