Luminescence studies of a new line associated with germanium in GaAs
- 1 December 1969
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 2 (12), 1657-1665
- https://doi.org/10.1088/0022-3727/2/12/305
Abstract
A luminescence line has been observed at 1454 ev at 20°K in germanium-doped GaAs. Measurements have been made of the peak energy, intensity and half-width as a function of temperature. It is proposed that the centre responsible for the luminescence is an arsenic vacancy bound to a germanium atom on an arsenic site. Preliminary results indicate that a similar centre is present in silicon-doped GaAs grown from a gallium solution.Keywords
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