The effect of charge state on the local vibrational mode absorption of the carbon acceptor in semi-insulating GaAs
- 1 September 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (5), 2504-2506
- https://doi.org/10.1063/1.346516
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Temperature dependence of local vibrational mode optical absorption for carbon acceptors in GaAsApplied Physics Letters, 1989
- Lattice dynamics of isolated carbon in GaAsPhysical Review B, 1989
- Calibration of the carbon localized vibrational mode absorption line in GaAsApplied Physics Letters, 1986
- Gallium-isotope fine structure of impurity modes due to defect complexes in GaAsPhysical Review B, 1986
- Quantitative analysis of carbon in liquid-encapsulated Czochralski GaAsJournal of Applied Physics, 1985
- Line-shape anomaly in the local vibrational mode of a shallow acceptor in GaAsPhysical Review B, 1984
- Direct evidence for the existence of BAsimpurity antisite centres in GaAsJournal of Physics C: Solid State Physics, 1984
- Carbon in semi-insulating, liquid encapsulated Czochralski GaAsApplied Physics Letters, 1984
- Direct evidence for the site of substitutional carbon impurity in GaAsApplied Physics Letters, 1982
- Carbon, oxygen and silicon impurities in gallium arsenideJournal of Physics D: Applied Physics, 1978