Line-shape anomaly in the local vibrational mode of a shallow acceptor in GaAs
- 15 September 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (6), 3563-3565
- https://doi.org/10.1103/physrevb.30.3563
Abstract
Infrared transmission measurements have been performed on the local vibrational modes (LVM) of carbon acceptors in GaAs as a function of compensation ratio. This study indicates that there are two distinct line shapes that are characteristic of the neutral and negative charge states of the carbon acceptors. Because of the interaction between the LVM and the bound hole, the linewidth of the LVM arising from neutral carbon acceptors is significantly wider than that observed for the negatively charged state. In addition, the pressence of the bound hole reduces the bonding strength of the carbon atom to the lattice and lowers the LVM frequency by 0.15 . The magnitude of the change in the frequency of the LVM as a consequence of the change in charge state of the carbon acceptor is significantly smaller than was proposed recently.
Keywords
This publication has 6 references indexed in Scilit:
- Carbon in semi-insulating, liquid encapsulated Czochralski GaAsApplied Physics Letters, 1984
- Boron impurity anti-site defects in p-type gallium-rich gallium arsenideJournal of Physics C: Solid State Physics, 1983
- Direct evidence for the site of substitutional carbon in GaAs using localized vibrational mode spectroscopyPhysica B+C, 1983
- Host isotope fine structure of local modes: C and Si in GaAsJournal of Physics C: Solid State Physics, 1982
- Direct evidence for the site of substitutional carbon impurity in GaAsApplied Physics Letters, 1982
- An infra-red study of defects produced in n-type silicon by electron irradiation at low temperaturesSolid State Communications, 1971