The electrochemical behaviour of n‐type silicon (111)‐surfaces in fluoride containing aqueous electrolytes
- 1 April 1987
- journal article
- research article
- Published by Wiley in Berichte der Bunsengesellschaft für physikalische Chemie
- Vol. 91 (4), 394-398
- https://doi.org/10.1002/bbpc.19870910432
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Orientation dependent adsorption on a cylindrical silicon crystal: I. WaterSurface Science, 1985
- Evidence of dissociation of water on the Si(100)2 × 1 surfacePhysical Review B, 1984
- Hydride formation on the Si(100):O surfacePhysical Review B, 1984
- Anodic properties of n-Si and n-Ge electrodes in HF solution under illumination and in the darkJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983
- Photoanodic properties of an n-type silicon electrode in aqueous solutions containing fluoridesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983
- Dissociative chemisorption of H2O on Si(100) and Si(111) - a vibrational studySolid State Communications, 1982
- On etching very narrow grooves in siliconApplied Physics Letters, 1975
- Anodic dissolution of silicon in hydrofluoric acid solutionsSurface Science, 1966
- On the Mechanism of Chemically Etching Germanium and SiliconJournal of the Electrochemical Society, 1960
- Electrolytic Shaping of Germanium and SiliconBell System Technical Journal, 1956