Studies on Group III-V Intermetallic Compounds

Abstract

A study has been made of the properties of the compounds GaAs and InSb alloyed with Si, Ge, Sn, and Pb; the quasi-binary InSb-GaSb was also investigated. Lattice parameter, infrared absorption, and electrical resistivity measurements were made. The forbidden energy gaps of the GaAs alloys were found to vary inversely with the spacing, with the one exception of the GaAs-Ge alloy, where the reverse effect was observed. On the basis of the infrared transmission and electrical resistivity data it was concluded that the Group IV elements substituted for nearest-neighbor pairs in GaAs, but in the case of Si and Ge in InSb it appeared that the substitution of only one atom in the unit polyhedron occurred.