Growth of highly uniform epitaxial layers over multiple substrates by molecular beam epitaxy
- 2 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 188-192
- https://doi.org/10.1016/0022-0248(87)90390-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Molecular beam epitaxy of gallium arsenide using direct radiative substrate heatingJournal of Vacuum Science & Technology B, 1986
- An indium-free mount for GaAs substrate heating during molecular beam epitaxial growthJournal of Vacuum Science & Technology B, 1986
- Classification of Surface Defects on GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1986
- GaAs Substrate Preparation for Oval-Defect Elimination during MBE GrowthJapanese Journal of Applied Physics, 1986
- Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxyApplied Physics Letters, 1986