PbTe-Pb1−xSnxTe superlattices prepared by a hot wall technique
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (11), 5845-5846
- https://doi.org/10.1063/1.327543
Abstract
The PbTe‐Pb0.8Sn0.2Te superlattices were made by the hot wall technique on BaF2 substrates. Two superlattices with the period thickness of 100 and 200 Å were analyzed by sputtering‐Auger electron spectroscopy and good results were obtained. The interdiffusions of Pb and Sn across the junction were also investigated and the diffusion coefficients of Pb and Sn at 300 °C were found to be 1.8 and 2.9×10−17 cm2/sec, respectively.Keywords
This publication has 7 references indexed in Scilit:
- In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxyApplied Physics Letters, 1977
- A new semiconductor superlatticeApplied Physics Letters, 1977
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975
- Pb1-xSnxTe epitaxial layers prepared by the hot-wall techniqueJournal of Electronic Materials, 1975
- Ga1−x Alx As superlattices profiled by Auger electron spectroscopyApplied Physics Letters, 1974
- Growth of Periodic Structures by the Molecular-Beam MethodApplied Physics Letters, 1971
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970