In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxy

Abstract

Smooth films of n‐In_1−xGa_xAs and p‐GaSb_1−yAs_y were grown by molecular beam epitaxy. As a function of the compositions, x and y, the lattice constants vary linearly while the energy gaps show a downward bowing. Abrupt heterojunctions made of these alloys with close lattice matching exhibit a series of current‐voltage characteristics which change from rectifying to Ohmic as x and y are reduced. The relative location of the band‐edge energies of the two semiconductors at the interface is shown to account for the unusual characteristics observed experimentally.