Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing
- 27 November 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (22), 2316-2318
- https://doi.org/10.1063/1.102048
Abstract
Diffusion of boron implanted into preamorphized silicon has been studied using secondary-ion mass spectroscopy and transmission electron microscopy. A surface preamorphized layer was created by double silicon ion implantation and the as-implanted boron profiles were confined completely within the preamorphized layer. Results show that boron diffusion during rapid thermal annealing (RTA) is anomalous in nature, and that the magnitude of the anomalous diffusion depends upon the RTA temperature. While RTA at 1150 °C shows an enhanced boron diffusion compared to that in single crystalline samples, a reduced diffusion is observed in preamorphized samples annealed at 1000 °C. Results are discussed in terms of the difference in the defect evolution during RTA.Keywords
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