Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors
- 1 January 2008
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 44 (25), 1487-1488
- https://doi.org/10.1049/el:20082925
Abstract
Surface leakage current is a significant source of dark current in conventional narrow-gap p-n junction photodetectors. It is shown that the nBn photodetector, which was originally designed to eliminate dark current arising from generation-recombination mechanisms, also effectively eliminates surface leakage currents. The result is a measured dark current lower by over six orders of magnitude than that of the InAs p-n photodetector for device temperatures of 140 K.Keywords
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