Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy
Open Access
- 1 December 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (11), 6797-6801
- https://doi.org/10.1063/1.360505
Abstract
The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distanceKeywords
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