Selective area oxidation of silicon with a scanning force microscope
- 24 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (21), 2691-2693
- https://doi.org/10.1063/1.109259
Abstract
The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub‐100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.Keywords
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