Evidence for complexes of hydrogen with deep-level defects in bulk III-V materials

Abstract

Series of sharp optical-absorption lines around 2000 ${\mathrm{cm}}^{\mathrm{-}1}$ in GaAs, 2300 ${\mathrm{cm}}^{\mathrm{-}1}$ in InP, and 2200 ${\mathrm{cm}}^{\mathrm{-}1}$ in GaP are reported. They are shown to be due to the vibration of As—H or P—H bonds, the hydrogen sitting near a transition-metal impurity or other defect. The ‘‘chemical shift’’ of the line is characteristic of the impurity or defect. A model of these centers is proposed.