Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with silicon
- 1 June 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (11), 3774-3777
- https://doi.org/10.1063/1.336764
Abstract
Hall effect and conductivity measurements have been performed on n- and n+-silicon-doped GaAs epilayers before and after hydrogen plasma exposure. We show that the reduction of the free-carrier concentration in the hydrogen diffused region is accompanied by a significant increase of the electron mobility. This increase is mainly attributed to the transformation of the ionized silicon donors into neutral complexes. This result is in quite good agreement with the model of silicon donor neutralization by formation of neutral silicon–hydrogen complexes.Keywords
This publication has 12 references indexed in Scilit:
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985
- Hydrogen localization near boron in siliconApplied Physics Letters, 1985
- Modification of surface characteristics in GaAs with dry processingIEEE Transactions on Electron Devices, 1985
- MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistorJournal of Crystal Growth, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Passivation of the dominant deep level (EL2) in GaAs by hydrogenApplied Physics Letters, 1982
- Hydrogen passivation of a bulk donor defect (E c −0.36 eV) in GaAsJournal of Applied Physics, 1982
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982
- Deuterium at the Si-SiO2 interface detected by secondary-ion mass spectrometryApplied Physics Letters, 1981
- Electrical characterization of epitaxial layersThin Solid Films, 1976