Diffusion of Nickel in Amorphous Silicon Dioxide and Silicon Nitride Films
- 1 October 1969
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (11), 4374-4376
- https://doi.org/10.1063/1.1657201
Abstract
Nickel‐59 radiotracer has been used to determine nickel diffusion coefficients in amorphous silicon dioxide and silicon nitride films between 1100° and 1490°K. Nickel distribution has been found to be Fickian with the calculated diffusivities obeying Arrhenius equation. Long diffusion times have been found to produce anomalous diffusivities in silicon nitride.Keywords
This publication has 9 references indexed in Scilit:
- Distribution of sodium in silicon nitrideSolid-State Electronics, 1969
- Electric fields at the surface and interface of SiO2 films on siliconSurface Science, 1969
- Structure and Sodium Migration in Silicon Nitride FilmsJournal of the Electrochemical Society, 1968
- The Built-in Voltage and the Charge Distributions in the Oxide of MOS StructureJapanese Journal of Applied Physics, 1967
- GOLD DIFFUSIVITIES IN SiO2 AND Si USING THE MOS STRUCTUREApplied Physics Letters, 1966
- Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysisIEEE Transactions on Electron Devices, 1966
- An investigation of instability and charge motion in metal-silicon oxide-silicon structuresIEEE Transactions on Electron Devices, 1966
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Diffusion of phosphorus in silicon oxide filmJournal of Physics and Chemistry of Solids, 1959